BAR90081LSE6327XT Infineon Technologies, BAR90081LSE6327XT Datasheet - Page 3

• Manufacturer Part Number: BAR90081LSE6327XT
• Description: PIN Diodes Silicon Deep Trench PIN Diodes
• Manufacturer: Infineon Technologies
• Type: Switchr

Specifications of BAR90081LSE6327XT

• Configuration: Quad
• Forward Current: 100mA
• Forward Voltage: 1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Operating Temperature (max): 125C
• Applications Frequency Range: UHF
• Lead Free Status / RoHS Status: Compliant

1
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
V
V
V
Reverse parallel resistance
V
V
V
Forward resistance
I
I
I
Charge carrier life time
I
R
I-region width
Insertion loss
I
I
I
Isolation
V
V
V
Single BAR90 diode in series configuration, Z = 50 Ω
F
F
F
F
F
F
F
R
R
R
R
R
R
R
R
R
R
L
= 1 mA, f = 100 MHz
= 3 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, measured at I
= 1 mA, f = 1.8 GHz
= 3 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 100 Ω
= 1 V, f = 1 MHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 0.9 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 2.45 GHz
1)
1)
R
= 3 mA, I
A
= 25°C, unless otherwise specified
R
= 6 mA,
3
Symbol
C
R
r
τ
W
I
I
L
SO
f
T
P
rr
I
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.25
0.19
0.18
0.16
0.11
0.08
18.5
13.5
11.5
typ.
750
1.3
0.8
0.3
35
20
2
5
4
BAR90-081LS
max.
0.35
2009-01-26
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
k Ω
Ω
ns
µm
dB