FF400R17KF6C_B2 Infineon Technologies, FF400R17KF6C_B2 Datasheet

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FF400R17KF6C_B2

Manufacturer Part Number
FF400R17KF6C_B2
Description
IGBT Modules N-CH 1.7KV 650A
Manufacturer
Infineon Technologies
Datasheet
1.FF400R17KF6C_B2.pdf (9 pages)

Specifications of FF400R17KF6C_B2

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
650 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
3.3 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
IHM
Ic (max)
400.0 A
Vce(sat) (typ)
2.7 V
Technology
IGBT2 Low Loss
Housing
IHM 130 mm
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FF400R17KF6C_B2
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
FF400R17KF6C_B2
Quantity:
55
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Alfons Wiesenthal
approved by: Chr. Lübke; 11.08.2000
IGBT-Module
IGBT-Modules
1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
V
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 13.07.2000
revision: 2 (Series)
FF 400 R 17 KF6C B2
C
C
C
P
P
C
C
C
R
GE
CE
CE
CE
= 1 ms, T
= 1 ms
= 400A, V
= 400A, V
= 30mA, V
=25°C, Transistor
= 80 °C
= 25 °C
= 0V, t
= 1700V, V
= 1700V, V
= 0V, V
= -15V ... +15V
p
= 10ms, T
vj
vj
GE
C
GE
GE
CE
= 25°C,V
= 25°C,V
= 80°C
= 20V, T
= 15V, T
= 15V, T
GE
GE
= V
= 0V, T
= 0V, T
GE
1(8)
, T
Vj
CE
CE
vj
= 125°C
vj
vj
vj
= 25°C
= 25V, V
= 25V, V
= 25°C
= 125°C
= 25°C
vj
vj
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
C
I
I
P
CE sat
CRM
FRM
GE(th)
Q
GES
CES
I
ISOL
CES
I
GES
I
2
C
F
res
tot
ies
G
t
min.
4,5
-
-
-
-
-
-
+/- 20V
1700
typ.
0,01
400
650
800
400
800
3,3
2,6
3,1
5,5
4,8
1,3
45
27
4
5
-
FF400R17KF6CB2
max.
400
3,1
3,6
6,5
40
1
-
kA
kW
mA
mA
µC
kV
nF
nF
nA
V
A
A
A
V
A
A
V
V
V
2
s

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FF400R17KF6C_B2 Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) 900 800 Tvj = 25°C 700 Tvj = 125°C 600 500 400 300 200 100 0 0,0 0,5 1,0 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 900 800 vGE = ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 900 800 700 600 500 400 300 200 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 900 800 700 600 500 400 ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 700 Eoff 600 Eon Erec 500 400 300 200 100 0 0 100 200 Schaltverluste (typisch) Switching losses (typical) 800 Eoff 700 Eon Erec 600 500 400 300 ...

Page 7

Technische Information / Technical Information IGBT-Module FF 400 R 17 KF6C B2 IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 0,1 0,01 0,001 0,001 0, [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : ...

Page 8

Technische Information / Technical Information IGBT-Module IGBT-Modules Äußere Abmessungen / external dimensions FF 400 R 17 KF6C B2 8(8) FF400R17KF6CB2 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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