FF400R17KF6C_B2 Infineon Technologies, FF400R17KF6C_B2 Datasheet - Page 7

• Manufacturer Part Number: FF400R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 650A
• Manufacturer: Infineon Technologies

Specifications of FF400R17KF6C_B2

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 650 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 3.3 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 400.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
0,001
900
800
700
600
500
400
300
200
100
0
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
i
[K/kW]
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
IC,Modul
IC,Chip
0,01
FF 400 R 17 KF6C B2
400
600
0,003
0,003
0,1
3,64
6,7
1
800
7 (8)
V
1000
17,97
36,44
0,045
CE
0,05
2
t [sec]
[V]
1
Z
thJC
1200
R
g
= f (t)
= 3,6 Ohm, T
12,44
0,45
7,6
0,1
Zth:Diode
Zth:IGBT
3
1400
10
vj
= 125°C
vorläufige Daten
preliminary data
1600
12,42
8,78
0,95
0,75
4
1800
100
FF400R17KF6CB2