BYM200B170DN2 Infineon Technologies, BYM200B170DN2 Datasheet - Page 3

• Manufacturer Part Number: BYM200B170DN2
• Description: IGBT Modules N-CH 1.7KV 200A
• Manufacturer: Infineon Technologies

Specifications of BYM200B170DN2

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 200A
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 200 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• If (max): 200.0 A
• Vrrm (max): 1,700.0 V
• Rthjc (max): 0.15 K/W
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
400
350
300
250
200
150
100
50
0
0,0
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Ü
0,5
BYM 200 B 170 DN2
1,0
3(4)
V
F
1,5
[V]
Tvj = 25°C
Tvj = 125°C
2,0
2,5
vorläufige Daten
preliminary data
F
I
= f (V
F
)
3,0
DB_BYM200B170DN2_2.2.xls