BSM25GD120DLCE3224 Infineon Technologies, BSM25GD120DLCE3224 Datasheet - Page 6
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BSM25GD120DLCE3224
Manufacturer Part Number
BSM25GD120DLCE3224
Description
IGBT Modules N-CH 1.2KV 50A
Manufacturer
Infineon Technologies
Datasheet
1.BSM25GD120DLCE3224.pdf
(9 pages)
Specifications of BSM25GD120DLCE3224
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
200 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2A
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM25GD120DLCE3224
Manufacturer:
SIEMENS
Quantity:
560
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
16
14
12
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
Schaltverluste (typisch)
Switching losses (typical)
0
Schaltverluste (typisch)
Switching losses (typical)
5
30
10
Eoff
Eon
Erec
Eoff
Eon
Erec
60
15
BSM25GD120DLCE3224
90
V
E
GE
on
=15V, R
= f (I
120
20
V
gon
E
GE
6(8)
C
on
=15V , I
) , E
= R
= f (R
R
goff
I
150
C
25
G
off
[A]
=33
[ ]
C
= 25A , V
= f (I
G
) , E
, V
CE
180
C
30
CE
) , E
= 600V, T
off
= 600V , T
= f (R
rec
j
210
= f (I
= 125°C
35
j
G
= 125°C
) , E
C
)
rec
240
40
Seriendatenblatt_BSM25GD120DLC-E3224.xls
= f (R
G
)
270
45
300
50