BSM25GD120DLCE3224 Infineon Technologies, BSM25GD120DLCE3224 Datasheet - Page 6

• Manufacturer Part Number: BSM25GD120DLCE3224
• Description: IGBT Modules N-CH 1.2KV 50A
• Manufacturer: Infineon Technologies

Specifications of BSM25GD120DLCE3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
16
14
12
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
Schaltverluste (typisch)
Switching losses (typical)
0
Schaltverluste (typisch)
Switching losses (typical)
5
30
10
Eoff
Eon
Erec
Eoff
Eon
Erec
60
15
BSM25GD120DLCE3224
90
V
E
GE
on
=15V, R
= f (I
120
20
V
gon
E
GE
6(8)
C
on
=15V , I
) , E
= R
= f (R
R
goff
I
150
C
25
G
off
[A]
=33
[ ]
C
= 25A , V
= f (I
G
) , E
, V
CE
180
C
30
CE
) , E
= 600V, T
off
= 600V , T
= f (R
rec
j
210
= f (I
= 125°C
35
j
G
= 125°C
) , E
C
)
rec
240
40
Seriendatenblatt_BSM25GD120DLC-E3224.xls
= f (R
G
)
270
45
300
50