BSM25GD120DLCE3224 Infineon Technologies, BSM25GD120DLCE3224 Datasheet - Page 8

• Manufacturer Part Number: BSM25GD120DLCE3224
• Description: IGBT Modules N-CH 1.2KV 50A
• Manufacturer: Infineon Technologies

Specifications of BSM25GD120DLCE3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
Technische Information / Technical Information
BSM25GD120DLCE3224
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Seriendatenblatt_BSM25GD120DLC-E3224