BSM25GD120DLCE3224 Infineon Technologies, BSM25GD120DLCE3224 Datasheet - Page 8
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BSM25GD120DLCE3224
Manufacturer Part Number
BSM25GD120DLCE3224
Description
IGBT Modules N-CH 1.2KV 50A
Manufacturer
Infineon Technologies
Datasheet
1.BSM25GD120DLCE3224.pdf
(9 pages)
Specifications of BSM25GD120DLCE3224
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
200 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2A
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM25GD120DLCE3224
Manufacturer:
SIEMENS
Quantity:
560
IGBT-Module
IGBT-Modules
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
Technische Information / Technical Information
BSM25GD120DLCE3224
8(8)
Seriendatenblatt_BSM25GD120DLC-E3224