FD1200R17KE3-K Infineon Technologies, FD1200R17KE3-K Datasheet - Page 2

• Manufacturer Part Number: FD1200R17KE3-K
• Description: IGBT Modules N-CH 1.7KV 1.6KA
• Manufacturer: Infineon Technologies

Specifications of FD1200R17KE3-K

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1600 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
<
3
3
<
@
6h
3
N
&
;
6
c
A
%
%
'
'
A
'
%
H % A
'
&
'
&
'
'
H % A
'
%
'
A
5 `
5
'
<
'
%
'
'
'
FD1200R17KE3-K
()* + !,
-> +
6g + 1
6g + 1
6g + 1
-> + C
-D/ + 1! -
6g + 1
-> + C
-D/ + 1! -
6g + 1
-> + C
-D/ + 1! -
d=JIBR + 1
= + 1 %
3
3
-5 = + 1 % 5 ()* + 1 !,
-
-
-
;5 -D/ +
;5 -D/ +
;5
;5
;5
F
"
FV%_#W F
gF
gF
gF
+ 2
+ 2
+ 2
-
-
deTRJIR + 1
2
!
;FM
;FM
;FM
FV%_#W
()* + !,
()* + 1 !,
()* + !,
()* + 1 !,
()* + !,
()* + 1 !,
()* + !,
()* + 1 !,
NBK.f
->>?
NBKb.
6g>?
$TRi
6>?
-g
LT
6h
6g
Vorläufige Daten
preliminary data
% "
12
1
11!
1 !
154
15C
UC5
U !
!1
1C
U
"
% G"
5
45
#F
#F
M
M
%[
%[
;h
-
;
;
-
-
;
;