FD1200R17KE3-K Infineon Technologies, FD1200R17KE3-K Datasheet - Page 6

• Manufacturer Part Number: FD1200R17KE3-K
• Description: IGBT Modules N-CH 1.7KV 1.6KA
• Manufacturer: Infineon Technologies

Specifications of FD1200R17KE3-K

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1600 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Not Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
&
&
$TRi + V6gW
$TRi + V6gW
ND87 + 15 P5 -./ + C
ND87 + 15 P5 -./ + C
(
(
yBKb. + V W
yBKb. + V W
&
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$TRi + V6gW
ND87 + 15 P5 -./ + C
ND87 + 15 P5 -./ + C
(
(
yBKb. + V W
yBKb. + V W
A
A
A
A
500
450
400
350
300
250
200
150
100
100
50
10
0
1
0,001
'
'
'
'
0
%
%
%
%
H % A
H % A
H % A
H % A
3
3
3
3
400
$TRi5 ()* + 1 !,
yBKb. 3
%
%
%
%
0,01
800
-
-
-
-
1200
6g w;x
FD1200R17KE3-K
3
3
Ow#F
" V
" V
" V
" V
3
3
Ow x
0,1
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V
V
V
w x
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1
54
5 1
1600
W
W
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W
W
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1C5
5 U
1
U
1C5
5 C
2000
"
"
"
"
"
54
5
2400
10
6
&
&
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$TRi + VNDW
$TRi + VNDW
$TRi + VNDW
6g + 1
6g + 1
6g + 1
6g + 1
!
A
A
A
A
400
375
350
325
300
275
250
225
200
175
150
125
100
'
'
'
'
0
;5 -./ + C
;5 -./ + C
;5 -./ + C
;5 -./ + C
1
3
3
3
3
2
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3
-
-
-
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4
5
ND wPx
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" V
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6
Vorläufige Daten
preliminary data
7
W
W
W
W
W
W
8
W
W
9 10 11 12