BSM50GB60DLC Infineon Technologies, BSM50GB60DLC Datasheet - Page 2

• Manufacturer Part Number: BSM50GB60DLC
• Description: IGBT Modules 600V 50A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM50GB60DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recoverred charge
Abschaltenergie pro Puls
reverse recovery energy
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
Charakteristische Werte / Characteristic values
Diode / Diode
Technische Information / Technical Information
I
V
V
I
V
V
I
V
V
I
V
V
I
R
I
R
t
T
T
I
I
I
V
V
I
V
V
I
V
V
BSM 50 GB 60 DLC
C
C
C
C
C
C
P
F
F
F
F
F
GE
GE
GE
GE
GE
GE
GE
GE
vj
c
= 50A, V
= 50A, V
= 50A, -di
R
R
= 50A, -di
R
R
= 50A, -di
R
R
= 50A, V
= 50A, V
= 50A, V
= 50A, V
= 50A, V
G
= 50A, V
G
= 25°C
= 300V, V
= 300V, V
= 300V, V
= 300V, V
= 300V, V
= 300V, V
= 2,7 , T
= 2,7 , T
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
125°C, V
10µsec, V
GE
GE
CC
CC
CC
CC
CC
CC
F
F
F
/dt= 2900A/µsec
/dt= 2900A/µsec
/dt= 2900A/µsec
= 300V
= 300V
= 300V
= 300V
= 300V, V
= 300V, V
= 0V, T
= 0V, T
vj
vj
GE
GE
GE
GE
GE
GE
CC
= 125°C, L = 35nH
= 125°C, L = 35nH
G
G
G
G
G
G
G
G
GE
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= -10V, T
= 2,7 , T
= 2,7 , T
= 2,7 , T
= 2,7 , T
= 2,7 , T
= 2,7 , T
= 2,7 , T
= 2,7 , T
=360V, V
15V
2 (8)
vj
vj
= 25°C
= 125°C
GE
GE
vj
vj
vj
vj
vj
vj
CEmax
vj
vj
vj
vj
vj
vj
vj
vj
= 15V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= V
CES
-L
CE
·di/dt
R
L
CC'+EE'
t
E
t
E
E
I
d,off
I
d,on
V
Q
RM
SC
t
t
rec
r
f
on
off
CE
F
r
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
typ.
typ.
1,25
1,20
120
130
225
0,5
1,0
1,2
3,4
5,6
1,5
40
42
10
12
21
40
88
92
9
-
BSM 50 GB 60 DLC
max.
max.
1,6
2000-02-08
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
m
mJ
mJ
nH
µC
µC
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
V
V
A
A