BSM50GB60DLC Infineon Technologies, BSM50GB60DLC Datasheet - Page 8

• Manufacturer Part Number: BSM50GB60DLC
• Description: IGBT Modules 600V 50A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM50GB60DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 75 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 280 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 34MM
• Ic (max): 50.0 A
• Vce(sat) (typ): 1.95 V
• Technology: IGBT2 Low Loss
• Housing: 34 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1
2
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
1
BSM 50 GB 60 DLC
10
23
6
13
80
94
17
2
8 (8)
23
6
3
17
M5
2,8 x 0,5
5
4
6
7
6
7
3
5
4
BSM 50 GB 60 DLC
2000-02-08