SMBT2222AE6327XT Infineon Technologies, SMBT2222AE6327XT Datasheet - Page 2
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SMBT2222AE6327XT
Manufacturer Part Number
SMBT2222AE6327XT
Description
Transistor, NPN, Switching, 40 V(CEO), 6 V(EBO), 600 mA, SOT23
Manufacturer
Infineon Technologies
Type
Switchingr
Specifications of SMBT2222AE6327XT
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
75V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
600mA
Power Dissipation
330mW
Frequency (max)
300MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Current, Collector
600 mA
Current, Gain
100
Frequency
300 MHz
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
75 V
Voltage, Collector To Emitter
40 VDC
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
6 V
Lead Free Status / RoHS Status
Compliant
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
1
C
C
E
C
C
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 µA, I
= 100 µA, V
= 1 mA, V
= 10 mA, V
= 150 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 3 V, I
= 60 V, I
= 60 V, I
C
C
E
CE
B
E
E
= 0
CE
= 0
= 0
B
B
B
B
CE
= 0
= 0
= 0 , T
CE
CE
CE
1)
= 10 V
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 10 V
= 10 V
= 1 V
= 10 V
= 10 V
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
2
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
SMBT2222A/MMBT2222A
min.
100
0.6
35
50
75
50
40
40
75
6
-
-
-
-
-
-
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
0.01
300
0.3
1.2
10
10
1
2
2007-04-19
-
-
-
-
-
-
-
-
Unit
V
µA
nA
-
V