SMBT2222AE6327XT Infineon Technologies, SMBT2222AE6327XT Datasheet - Page 7

• Manufacturer Part Number: SMBT2222AE6327XT
• Description: Transistor, NPN, Switching, 40 V(CEO), 6 V(EBO), 600 mA, SOT23
• Manufacturer: Infineon Technologies
• Type: Switchingr

Specifications of SMBT2222AE6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 75V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 330mW
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Current, Collector: 600 mA
• Current, Gain: 100
• Frequency: 300 MHz
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 75 V
• Voltage, Collector To Emitter: 40 VDC
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Compliant

Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.4
1) Lead width can be 0.6 max. in dambar area
0.25
+0.1
-0.05
1)
Package SOT23
M
Pin 1
B C
2.9
1
1.9
4
±0.1
EH
0.8
3
3.15
2
0.95
0.9
C
0.8
1.2
B
s
7
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
1.15
0.2
SMBT2222A/MMBT2222A
M
A
1
±0.1
0.1 MAX.
A
2007-04-19