SMBT2222AE6327XT Infineon Technologies, SMBT2222AE6327XT Datasheet - Page 4

• Manufacturer Part Number: SMBT2222AE6327XT
• Description: Transistor, NPN, Switching, 40 V(CEO), 6 V(EBO), 600 mA, SOT23
• Manufacturer: Infineon Technologies
• Type: Switchingr

Specifications of SMBT2222AE6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 75V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 330mW
• Frequency (max): 300MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Current, Collector: 600 mA
• Current, Gain: 100
• Frequency: 300 MHz
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 75 V
• Voltage, Collector To Emitter: 40 VDC
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Compliant

Test circuit
Delay and rise time
Storage and fall time
Oscillograph: R > 100 , C < 12pF, t
16.2
0
9.9
0
V
~100
V
~
500
s
< 5 ns
-13.8
s
0.5
619
V
V
1
r
k
< 5ns
-3.0
4
200
200
V
30
SMBT2222A/MMBT2222A
EHN00055
30
EHN00056
V
V
Osc.
Osc.
2007-04-19