SPA11N80C3XK Infineon Technologies, SPA11N80C3XK Datasheet - Page 2

• Manufacturer Part Number: SPA11N80C3XK
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPA11N80C3XK

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.45Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220FP
• Power Dissipation: 41W
• Lead Free Status / RoHS Status: Compliant

Rev. 2.9
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wave soldering only allowed at leads
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
4)
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
I
I
dv /dt
Symbol Conditions
R
R
T
V
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
(BR)DS
GS(th)
thJC
thJA
DS(on)
G
T
leaded
1.6 mm (0.063 in.)
from case for 10s
V
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
C
j
j
j
j
GS
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
page 2
=25 °C
=0 V, I
=0 V, I
=V
=800 V, V
=800 V, V
=20 V, V
=10 V, I
=10 V, I
GS
, I
D
D
D
=250 µA
=11 A
D
D
=0.68 mA
DS
=7.1 A,
=7.1 A,
GS
GS
=0 V
=0 V,
=0 V,
min.
800
2.1
-
-
-
-
-
-
-
-
-
-
Values
Value
0.39
1.05
typ.
870
100
1.2
11
33
4
3
-
-
-
-
-
-
SPP11N80C3
max.
0.45
260
100
0.8
3.9
62
20
-
-
-
-
-
2008-10-15
Unit
A
V/ns
Unit
K/W
°C
V
µA
nA