SPA11N80C3XK Infineon Technologies, SPA11N80C3XK Datasheet - Page 4

• Manufacturer Part Number: SPA11N80C3XK
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of SPA11N80C3XK

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.45Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220FP
• Power Dissipation: 41W
• Lead Free Status / RoHS Status: Compliant

Rev. 2.9
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
thJC
tot
=f(T
=f(t
160
140
120
100
10
10
10
80
60
40
20
0
-1
-2
0
P
C
10
0
)
)
-5
0.01
single pulse
0.02
0.2
0.1
0.05
0.5
25
p
/T
10
-4
50
T
t
C
10
p
75
[°C]
[s]
-3
100
10
-2
125
10
150
page 4
-1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
40
30
20
10
DS
DS
-1
0
2
1
0
); T
1
); T
0
limited by on-state
resistance
C
p
j
=25 °C; t
GS
=25 °C; D =0
5
10
p
=10 µs
10
V
V
DS
DS
DC
10 V
[V]
[V]
6 V
5.5 V
5 V
4.5 V
15
100
20 V
10 ms
SPP11N80C3
1 ms
100 µs
10 µs
20
2008-10-15
1 µs
1000
25