PEF80902HV1.1XT Infineon Technologies, PEF80902HV1.1XT Datasheet - Page 66
PEF80902HV1.1XT
Manufacturer Part Number
PEF80902HV1.1XT
Description
Manufacturer
Infineon Technologies
Datasheet
1.PEF80902HV1.1XT.pdf
(83 pages)
Specifications of PEF80902HV1.1XT
Lead Free Status / Rohs Status
Compliant
- Current page: 66 of 83
- Download datasheet (2Mb)
1)
2)
3)
Table 25
Receive Path
Signal / (noise + total harmonic distortion)
DC-level at AD-output
Threshold of level detect
(measured between AIN and BIN with
respect to zero signal)
Input impedance AIN/BIN
Transmit Path
Signal / (noise + total harmonic distortion)
Common mode DC-level
Offset between AOUT and BOUT
Absolute peak voltage for a single +3 or -3
pulse measured between AOUT and
BOUT
Output impedance AOUT/BOUT:
Power-up
Power-down
1)
2)
3)
4)
5)
Data Sheet
Requirement ITU-T I.430, chapter 8.5.1.1a): ’At all times except when transmitting a binary zero, the output
impedance , in the frequency range of 2kHz to 1 MHz, shall exceed the impedance indicated by the template
in Figure 11. The requirement is applicable with an applied sinusoidal voltage of 100 mV (r.m.s value)’
Requirement ITU-T I.430, chapter 8.5.1.1b): ’When transmitting a binary zero, the output impedance shall be
> 20 .’: Must be met by external circuitry.
Requirement ITU-T I.430, chapter 8.5.1.1b), Note: ’The output impedance limit shall apply for a nominal load
impedance (resistive) of 50 . The output impedance for each nominal load shall be defined by determining
the peak pulse amplitude for loads equal to the nominal value +/- 10%. The peak amplitude shall be defined
as the the amplitude at the midpoint of a pulse. The limitation applies for pulses of both polarities.’
Test conditions: 1.4 Vpp differential sine wave as input on AIN/BIN with long range (low, critical range).
Versions PEF 8x913 with enhanced performance of the U-interface are tested with tightened limit values
The percentage of the "1 "-values in the PDM-signal.
Interpretation and test conditions: The sum of noise and total harmonic distortion, weighted with a low pass
filter 0 to 80 kHz, is at least 70 dB below the signal for an evenly distributed but otherwise random sequence
of +3, +1, -1, -3.
The signal amplitude measured over a period of 1 min. varies less than 1%.
5)
U-Transceiver Characteristics
1)
4)
58
Limit Values
min.
65
45
10
80
70
1.61
2.42
2)
typ.
50
1.65
2.5
0.8
3
Electrical Characteristics
max.
55
23
1.69
35
2.58
1.5
6
PEF 80902
2001-11-12
Unit
dB
%
mV
peak
k
dB
V
mV
V
3)
Related parts for PEF80902HV1.1XT
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
T-sminto 4b3t Second Gen. Modular Isdn Nt
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
16-bit microcontroller with 2x2 KByte RAM
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Si-MMIC-amplifier in SIEGET 25-technologie
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
IGBT Power Module
Manufacturer:
Infineon Technologies AG
Datasheet: