BSP752TXT Infineon Technologies, BSP752TXT Datasheet
BSP752TXT
Specifications of BSP752TXT
Related parts for BSP752TXT
BSP752TXT Summary of contents
Page 1
... ESD - Protection Very low standby current Application All types of resistive, inductive and capacitive loads µC compatible power switch for and applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS Providing embedded protective functions ...
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... GND Signal GND Function Logic ground Input, activates the power switch in case of logic high signal Output to the load not connected Positive power supply voltage Positive power supply voltage Positive power supply voltage Positive power supply voltage Vbb ...
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... Supply voltage for full short circuit protection Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Operating temperature Storage temperature 1) Power dissipation Inductive load switch-off energy dissipation single pulse, (see page 8) Tj =150 ° Load dump protection V ...
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... Electrical Characteristics Parameter and Conditions -40...+150° 12..42V Load Switching Capabilities and Characteristics On-state resistance = 25 ° 9... 150 ° Nominal load current; Device on PCB = 85 °C, T 150 ° Turn-on time to 90 Turn-off time to 10 Slew rate 30 13 Slew rate off Operating Parameters ...
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... 150 ° -40...+150 °C, V > see page Repetitive short circuit current limit (see timing diagrams < > Output clamp (inductive load switch off OUT bb ON(CL Overvoltage protection Thermal overload trip temperature Thermal hysteresis Reverse Battery 4) Reverse battery Drain-source diode voltage (V = 150 °C ...
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Electrical Characteristics Parameter and Conditions -40...+150° 12..42V Input Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current state input current V ...
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Terms PROFET V IN GND V I GND bb R GND Input circuit (ESD protection ESD GND The use of ESD zener diodes as voltage clamp ...
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... IN GND GND disconnect with GND pull OUT PROFET GND GND disconnect with charged inductive load high OUT V bb Inductive Load switch-off energy dissipation Energy stored in load inductance: E While demagnetizing load inductance, the enérgy dissipated in PROFET with an approximate solution for Page 8 V ...
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Typ. transient thermal impedance 6cm heatsink area thJA p Parameter: D D=0.5 K/W D=0.2 D=0 D=0.05 D=0. D=0.01 D ...
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Typ. turn on time 160 µs 120 100 -40 - Typ. slew rate on dV/ ...
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Typ. standby current 42V ; V bb(off µ -40 - Typ. initial peak short circuit current limit I = f(V ) L(SCp) ...
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Typ. input current 13,5V; V IN(on/off 0,7V low high 12 µ -40 - Typ. input threshold voltage ...
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... Maximum allowable load inductance for a single switch off =150° jstart L 2000 mH 1600 1400 1200 1000 800 600 42V 400 13,5V 200 0 0 0.25 0.5 0.75 Maximum allowable inductive switch-off energy, single pulse E = f(I AS 1800 mJ 1400 1200 1000 800 600 ...
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... Timing diagrams Figure 1a: Vbb turn on OUT Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition Figure 2b: Switching a lamp, IN OUT Figure 2c: Switching an inductive load IN V OUT Page 14 BSP 752 2004-01-27 ...
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Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling L(SCp) I L(SCr off(SC) Heating up of the chip may require several milliseconds, depending on external conditions. Figure 4: ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...