DP8409AN National Semiconductor, DP8409AN Datasheet - Page 15

• Manufacturer Part Number: DP8409AN
• Description: IC CONTROLLER DYNAMIC RAM 48-DIP
• Manufacturer: National Semiconductor

Specifications of DP8409AN

• Controller Type: Dynamic RAM (DRAM) Controller, Drivers
• Voltage - Supply: 4.75 V ~ 5.25 V
• Current - Supply: 250mA
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 48-DIP (0.600", 15.24mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Interface: -
• Other names: *DP8409AN

Symbol
ACCESS
t
t
t
t
t
t
t
t
Symbol
V
I
I
I
I
I
I
V
V
V
V
V
V
I
I
I
I
RICL
RICL
RICH
RICH
RCDL
RCDL
RCDH
RCDH
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage V
Storage Temperature Range
Input Voltage
Output Current
Lead Temperature (Soldering 10 seconds)
Electrical Characteristics
Switching Characteristics DP8409A DP8409A-3
V
of 22 DRAMs each or 88 DRAMs including trace capacitance These values are Q0– Q8 C
150 pF WE C
closed unless otherwise noted and R1 and R2 are 4 7 k
with all outputs switching
IH1
IH2
I
I
IL1
IL2
1D
0D
OZ
CC
Except RF I O Output
C
IL
IH
OL1
OL2
OH1
OH2
RSI
CTL
CC
e
5 0V
RASIN to CAS Output Delay (Mode 5)
RASIN to CAS Output Delay (Mode 6)
RASIN to CAS Output Delay (Mode 5)
RASIN to CAS Output Delay (Mode 6)
RAS to CAS Output Delay (Mode 5)
RAS to CAS Output Delay (Mode 6)
RAS to CAS Output Delay (Mode 5)
RAS to CAS Output Delay (Mode 6)
Input Clamp Voltage
Input High Current for ADS R C Only
Input High Current for All Other Inputs
Output Load Current for RF I O
Output Load Current for RAS CAS WE
Input Low Current for ADS R C Only
Input Low Current for All Other Inputs
Input Low Threshold
Input High Threshold
Output Low Voltage
Output Low Voltage for RF I O
Output High Voltage
Output High Voltage for RF I O
Output High Drive Current
Output Low Drive Current
TRI-STATE Output Current
(Address Outputs)
Supply Current
g
L
5% 0 C
e
CC
500 pF CAS C
s
Parameter
T
Parameter
A s
70 C (unless otherwise noted) (Notes 2 4 5) The output load capacitance is typical for 4 banks
L
e
600 pF (unless otherwise noted) See Figure 11 for test load Switches S1 and S2 are
b
V
65 C to
CC
(Note 1)
e
5 0V
a
150 mA
Figure 8a
Figures 8a 8b
Figure 8a
Figures 8a 8b
Figure 8a
Figures 8a 8b
Figure 8a
Figure 8a
150 C
300 C
Conditions
7 0V
5 5V
g
V
V
V
V
V
V
V
I
I
I
I
V
V
0 4V
CS
V
5% 0 C
OL
OL
OH
OH
CC
IN
IN
IN
IN
IN
IN
OUT
OUT
CC
unless otherwise noted Maximum propagation delays are specified
e
e
e
e
e
e
e
e
e
e b
e b
e
e
15
s
e
e
20 mA
10 mA
2 0V Mode 4
2 5V
2 5V
0 5V Output High
0 5V Chip Deselect
0 5V
0 5V
Min I
Max
V
Condition
0 8V (Note 3)
2 7V (Note 3)
1 mA
OUT s
s
100 A
Maximum Power Dissipation at 25 C
Operating Conditions
V
T
Derate cavity package 23 6 mW C above 25 C derate molded package
22 7 mW C above 25 C
A
CC
T
Cavity Package
Molded Package
C
Ambient Temperature
A s
Min
Supply Voltage
e b
95
80
40
50
2 7V
70 C (unless otherwise noted) (Notes 2 6)
12 mA
8409
Typ
125
105
48
63
98
78
27
40
Max
160
140
125
105
b
60
80
40
65
Min
2 0
2 4
2 4
50
L
e
Min
95
80
40
50
500 pF RAS0– RAS3 C
4 75
Min
b
b
b
b
b
b
0
Typ
200
250
2 0
1 0
0 3
0 3
3 5
3 5
1 0
0 05
200
0 8
1 5
1 5
0 1
8409A-3
Typ
125
105
48
63
98
78
27
40
Max
5 25
a
b
b
b
b
b
Max
100
325
70
0 8
0 5
0 5
50
50
1 2
2 5
2 5
1 0
0 5
Max
185
160
145
120
70
95
40
65
3542 mW
2833 mW
Units
Units
Units
L
mA
mA
mA
mA
mA
mA
mA
V
C
V
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
ns
ns
A
A
A
e