FDMC8026S Fairchild Semiconductor, FDMC8026S Datasheet - Page 2

• Manufacturer Part Number: FDMC8026S
• Description: MOSFET Power 30V N-Channel PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8026S

• Configuration: Single (SyncFET)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.4 mOhms
• Forward Transconductance Gfs (max / Min): 106 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMC8026S Rev.C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
θJA
AS
DSS
GS(th)
DSS
J
J
of 66 mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
°
C, L = 0.3 mH, I
a. 53 °C/W when mounted on a
1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
2
J
pad of 2 oz copper.
= 25 °C unless otherwise noted
AS
= 21 A, V
DD
= 27 V, V
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
T
V
V
V
I
I
I
V
V
D
F
D
D
J
DS
DD
GS
GS
GS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 19 A, di/dt = 300 A/μs
= 10 mA, referenced to 25 °C
= 1 mA, V
= 10 mA, referenced to 25 °C
= 125 °C
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 15 V, V
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
GS
2
= 10 V. 100% tested at L = 3 mH, I
DS
Test Conditions
, I
D
S
S
D
GS
D
D
D
= 19 A
D
= 19 A
= 2 A
GS
GEN
GS
DS
= 1 mA
= 19 A,
= 19 A
= 19 A,
= 17.5 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 19 A
= 15 V,
(Note 2)
(Note 2)
θJC
b. 125 °C/W when mounted on a
is guaranteed by design while R
AS
minimum pad of 2 oz copper.
= 10.2 A.
0.1
Min
1.2
30
2380
885
100
106
0.7
0.6
0.8
Typ
1.6
3.8
4.5
4.5
33
29
30
37
18
11
-5
26
5
4
6
6
3165
1175
Max
150
2.5
0.8
1.2
500
100
3.0
4.4
5.2
5.8
θCA
47
53
20
10
48
10
52
25
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
ns
μA
nA
nC
nC
nC
nC
nC
Ω
ns
ns
ns
ns
V
S
V
V