FDMC8026S Fairchild Semiconductor, FDMC8026S Datasheet - Page 4

• Manufacturer Part Number: FDMC8026S
• Description: MOSFET Power 30V N-Channel PowerTrench SyncFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8026S

• Configuration: Single (SyncFET)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.4 mOhms
• Forward Transconductance Gfs (max / Min): 106 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMC8026S Rev.C3
Typical Characteristics
0.01
200
100
0.1
10
10
30
10
Figure 7.
0.001
1
8
6
4
2
0
1
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
I
Figure 11. Forward Bias Safe
D
= 19 A
0.01
Switching Capability
V
8
Gate Charge Characteristics
DS
0.1
t
, DRAIN to SOURCE VOLTAGE (V)
AV
Operating Area
SINGLE PULSE
T
R
T
Unclamped Inductive
J
A
θ
DS(on)
, TIME IN AVALANCHE (ms)
Q
JA
= MAX RATED
= 25
V
g
, GATE CHARGE (nC)
DD
= 125
V
DD
= 10 V
0.1
o
16
C
= 15 V
o
C/W
1
T
J
= 125
T
24
J
V
T
1
J
= 25 °C unless otherwise noted
DD
o
C
= 25
= 20 V
10
o
C
T
J
32
10
= 100
10 s
100
1 ms
100 ms
1 s
DC
10 ms
100200
μ
o
C
s
100
40
4
1000
5000
1000
100
100
0.5
10
80
60
40
20
Figure 10.
50
0
1
10
0.1
25
Figure 12.
-4
Limited by Package
Figure 8.
SINGLE PULSE
R
T
Current vs Case Temperature
f = 1 MHz
V
A
θ
GS
JA
= 25
10
= 125
= 0 V
-3
V
o
50
Maximum Continuous Drain
DS
C
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
o
C/W
10
Single Pulse Maximum
C
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
-2
CASE TEMPERATURE (
V
GS
75
1
10
= 4.5 V
-1
V
GS
R
θ
= 10 V
JC
1
= 3.4
100
o
C/W
10
o
C )
125
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10
100
C
C
C
oss
iss
rss
1000
150
30