FDS6670S Fairchild Semiconductor, FDS6670S Datasheet - Page 3

• Manufacturer Part Number: FDS6670S
• Description: MOSFET Power SO-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6670S

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition
• Other names: FDS6670S_NL

Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6670S Rev E (W)