FDS6670S Fairchild Semiconductor, FDS6670S Datasheet - Page 5

• Manufacturer Part Number: FDS6670S
• Description: MOSFET Power SO-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6670S

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition
• Other names: FDS6670S_NL

Typical Characteristics
0.01
100
10
0.1
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0.01
0
Figure 7. Gate Charge Characteristics.
0.001
0.01
I
0.1
D
R
SINGLE PULSE
R
0.0001
=13.5A
1
DS(ON)
5
JA
V
T
GS
A
= 125
= 25
= 10V
LIMIT
10
o
o
C
C/W
0.1
V
D = 0.5
DS
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
0.05
15
0.02
Q
0.01
g
, GATE CHARGE (nC)
0.001
SINGLE PULSE
20
DC
1
Figure 11. Transient Thermal Response Curve.
10s
25
1s
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
(continued)
30
10ms
V
D S
0.01
1ms
= 5V
10
35
100 s
15V
40
10V
100
45
0.1
t
1
, TIME (sec)
3600
3000
2400
1800
1200
600
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
5
V
Power Dissipation.
D S
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
C
C
C
t
1
RSS
ISS
OSS
, TIME (sec)
15
1
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
10
100
20
JA
(t) = r(t) + R
A
= 125 °C/W
t
1
SINGLE PULSE
= P * R
R
t
2
JA
T
V
f = 1MHz
A
= 125°C/W
GS
= 25°C
100
FDS6670S Rev E (W)
25
= 0 V
JA
1
JA
(t)
/ t
2
1000
1000
30