FDMS3600S Fairchild Semiconductor, FDMS3600S Datasheet - Page 10

• Manufacturer Part Number: FDMS3600S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3600S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms, 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S, 171 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A, 30 A
• Power Dissipation: 2.2 W, 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0043ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3600S.
35
30
25
20
15
10
diode reverse recovery characteristic
-5
5
0
Figure 27. FDMS3600S SyncFET body
0
50
100
TIME (ns)
150
didt = 300 A/
(continued)
200
μ
s
250
300
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
-2
-3
-4
-5
-6
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
= 125
= 100
= 25
15
o
o
o
C
C
C
20
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25