FDMS3600S Fairchild Semiconductor, FDMS3600S Datasheet - Page 2

• Manufacturer Part Number: FDMS3600S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3600S

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms, 1.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S, 171 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A, 30 A
• Power Dissipation: 2.2 W, 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0043ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3600S Rev.C3
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current,
Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1:
V
Q2:
V
Q1:
V
Q2:
V
V
V
D
D
D
D
D
D
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
GS
GS
= 250 μA, V
= 1 mA, V
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 20 V, V
= 5 V, I
= 5 V, I
= 13 V, V
= 13 V, V
= 0 V to 10 V Q1
= 0 V to 4.5 V
= 20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 13 V, I
= 13 V, I
DS
DS
Test Conditions
, I
, I
2
D
D
GS
D
D
D
D
D
D
D
D
GS
GS
GS
DS
D
D
= 15 A
= 30 A
GS
= 15 A, R
= 30 A, R
= 250 μA
= 1 mA
= 15 A , T
= 30 A , T
= 15 A
= 30 A
= 0 V
= 14 A
= 25 A
= 0 V
= 0 V, f = 1 MHZ
= 0 V, f = 1 MHZ
= 0 V
= 0 V
V
I
Q2
V
I
D
D
DD
DD
= 15 A
= 30 A
GEN
GEN
J
J
= 13 V,
= 13 V,
= 125 °C
= 125 °C
= 6 Ω
= 6 Ω
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min
1.1
0.2
0.2
25
25
1
1264
4042
1207
Typ
171
340
148
1.8
1.5
4.3
6.2
5.9
1.3
1.7
1.8
20
18
0.6
0.9
67
-6
-5
58
7.9
5.3
1.8
3.9
3.9
2.4
5.8
13
19
38
19
59
27
11
2
9
1680
5375
1605
Max
www.fairchildsemi.com
500
100
100
2.7
5.6
8.1
8.7
1.6
2.4
2.7
450
220
90
1
3
2
3
16
23
10
11
34
60
10
10
27
82
13
38
mV/°C
mV/°C
Units
mΩ
μA
μA
nA
nA
pF
pF
pF
V
V
S
Ω
nC
nC
nC
nC
ns
ns
ns
ns