FDB5680 Fairchild Semiconductor, FDB5680 Datasheet - Page 3

• Manufacturer Part Number: FDB5680
• Description: MOSFET Power USE 512-FDB20AN06A0
• Manufacturer: Fairchild Semiconductor

Specifications of FDB5680

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
1
-50
V
DS
V
= 5V
I
GS
D
= 20A
-25
= 10V
V
V
GS
1
3
V
GS
= 10V
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
6.0V
25
5.0V
2
4
T
50
A
= -55
4.5V
o
75
C
4.0V
125
100
o
3
5
C)
o
C
25
o
C
125
150
4
6
0.05
0.04
0.03
0.02
0.01
0.0001
0.001
2.2
1.8
1.6
1.4
1.2
0.8
0
0.01
100
0.1
2
1
3
10
1
0
0
V
GS
V
GS
= 0V
10
4
= 4.0V
0.2
V
V
SD
GS
20
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
5
4.5V
A
0.4
= 125
I
D
, DRAIN CURRENT (A)
30
5.0V
o
C
6
0.6
40
25
6.0V
o
C
7
0.8
T
T
-55
50
A
A
7.0V
= 125
= 25
o
C
o
8
C
o
10V
1
C
60
FDP5680/FDB5680 Rev. C
I
D
= 20A
1.2
70
9
80
1.4
10