FDB5680 Fairchild Semiconductor, FDB5680 Datasheet - Page 4

• Manufacturer Part Number: FDB5680
• Description: MOSFET Power USE 512-FDB20AN06A0
• Manufacturer: Fairchild Semiconductor

Specifications of FDB5680

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

1000
100
10
0.1
10
8
6
4
2
0
1
0.1
0
RDS(ON) LIMIT
I
SINGLE PULSE
D
0.05
0.03
R
0.5
0.3
0.2
0.1
= 20A
V
JC
T
1
5
0.1
GS
C
= 2.3
= 25
= 10V
V
DS
o
o
C/W
D = 0.5
C
0.02
Single Pulse
0.2
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.1
10
Q
1
g
, GATE CHARGE (nC)
15
0.5
20
1
V
DC
DS
10
10s
= 10V
25
1s
100ms
30V
10ms
30
1ms
20V
10
100
35
t ,TIME (ms)
1
2500
2000
1500
1000
1500
1200
500
900
600
300
0
0.0001
0
0
100
10
0.001
C
V
C
C
DS
OSS
RSS
ISS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
20
P(pk)
0.01
T - T
R
Duty Cycle, D = t /t
J
1000
R
30
JC
t
1
C
JC
(t) = r(t) * R
t
= P * R
2
=2.3 °C/W
0.1
40
JC
3000
1
SINGLE PULSE
R
JC
(t)
2
FDP5680/FDB5680 Rev. C
JC
T
C
= 2.3
= 25
1
50
V
f = 1MHz
o
o
GS
C/W
C
10000
= 0 V
10
60