M58WR032KU70ZA6U NUMONYX, M58WR032KU70ZA6U Datasheet - Page 97

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M58WR032KU70ZA6U

Manufacturer Part Number
M58WR032KU70ZA6U
Description
NUMM58WR032KU70ZA6U NUM 32MB NOR FLASH P
Manufacturer
NUMONYX
Datasheet

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M58WR032KU70ZA6U
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M58WR032KU70ZA6U
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M58WRxxxKU, M58WRxxxKL
Table 39.
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
000Ah
0017h
0020h
0085h
0095h
0004h
0000h
0000h
0003h
0000h
0002h
0000h
Data
CFI query system interface information
V
bit 7 to 4
bit 3 to 0
V
bit 7 to 4
bit 3 to 0
V
bit 7 to 4
bit 3 to 0
V
bit 7 to 4
bit 3 to 0
Typical time-out per single byte/word program = 2
Typical time-out for multi-byte program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for multi-byte program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
[programming] supply minimum Program/Erase voltage
[programming] supply maximum Program/Erase voltage
logic supply minimum Program/Erase or Write voltage
logic supply maximum Program/Erase or Write voltage
BCD value in volts
BCD value in 100 millivolts
BCD value in volts
BCD value in 100 millivolts
HEX value in volts
BCD value in 100 millivolts
HEX value in volts
BCD value in 100 millivolts
Description
n
n
times typical
ms
n
times typical
n
µs
n
n
times typical
ms
n
n
times typical
Common Flash Interface
µs
128 µs
Value
16 µs
1.7 V
8.5 V
9.5 V
97/123
2 V
NA
1 s
NA
NA
NA
4 s

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