PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN011-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN011-30YL
Symbol
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DSM
DGR
GS
tot
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
Package
Name
LFPAK; Power-SO8
source
source
source
gate
mounting base; connected to drain
All information provided in this document is subject to legal disclaimers.
Description
plastic single-ended surface-mounted package; 4 leads
Conditions
T
t
T
V
V
pulsed; t
T
T
pulsed; t
V
V
p
j
j
mb
mb
GS
GS
GS
sup
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
≤ 25 ns; f ≤ 500 kHz; E
≥ 25 °C; T
≥ 25 °C; T
Rev. 2 — 17 May 2011
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
Simplified outline
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
SOT669 (LFPAK;
= 25 °C; I
mb
mb
Power-SO8)
1 2 3 4
= 25 °C; see
= 25 °C
DS(AL)
GS
mb
D
= 20 kΩ
= 51 A;
Figure 1
Figure 1
≤ 50 nJ; pulsed
Figure 3
PSMN011-30YL
Graphic symbol
Min
-
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
20
Version
SOT669
Max
30
35
30
36
51
203
49
175
175
51
203
14
D
S
Unit
V
V
V
V
A
A
A
W
°C
°C
A
A
mJ
2 of 14