PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
PSMN011-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(mΩ)
R
10
10
10
10
10
10
(A)
I
DSon
D
50
40
30
20
10
-1
-2
-3
-4
-5
-6
0
of drain current; typical values
gate-source voltage
T
Drain-source on-state resistance as a function
0
0
j
= 25°C; t
V
GS
(V) = 2.8
15
p
min
= 300 µs
1
3.0
30
3.2
typ
2
45
V
All information provided in this document is subject to legal disclaimers.
GS
003aab271
3.5
003aaf440
I
max
D
4.5
10
(V)
(A)
60
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
3
Rev. 2 — 17 May 2011
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
R
(mΩ)
V
DSon
GS(th)
(V)
30
25
20
15
10
5
0
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
T
0
j
= 25°C; I
2
0
D
= 15 A
PSMN011-30YL
4
max
typ
min
60
6
120
© NXP B.V. 2011. All rights reserved.
8
003aaf441
003aaf111
T
V
j
GS
(°C)
(V)
180
10
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