PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN011-30YL
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.02
Thermal characteristics
0.2
δ = 0.5
0.05
0.1
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
Rev. 2 — 17 May 2011
Conditions
see
10
-3
Figure 4
10
-2
PSMN011-30YL
Min
-
10
P
-1
t
Typ
1.78
p
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aaf434
δ =
Max
3.07
t
T
p
t
1
Unit
K/W
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