PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
6. Characteristics
Table 6.
Tested to JEDEC standards where applicable.
PSMN011-30YL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
f = 1 MHz
I
see
I
see
I
I
see
V
see
V
T
V
R
V
R
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
G(ext)
Rev. 2 — 17 May 2011
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 45 A; V
= 45 A; V
= 0 A; V
= 45 A; V
= 25 °C; see
Figure
Figure 12
Figure 12
Figure 13
Figure
Figure
Figure
Figure 15
= 30 V; V
= 30 V; V
= 16 V; V
= -16 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 15 V; see
= 15 V; V
= 15 V; R
= 15 V; R
= 4.7 Ω
= 4.7 Ω
DS
11; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
D
D
= 0 V; V
D
GS
GS
GS
L
L
DS
GS
GS
DS
= 15 A; T
= 15 A; T
= 15 V; V
= 15 V; V
= 15 V; V
= V
= V
= V
= 1.5 Ω; V
= 0.5 Ω; V
= 15 A; T
Figure 16
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 15
Figure 15
Figure 15
; T
; T
; T
GS
14;
j
j
j
j
j
GS
GS
GS
j
= 10 V
j
j
j
= 25 °C;
= 150 °C;
= -55 °C;
= 150 °C;
= 25 °C
j
j
j
GS
GS
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 4.5 V;
= 10 V;
= 10 V;
= 4.5 V;
= 4.5 V;
PSMN011-30YL
Min
30
27
1.3
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
0.02
-
10
10
-
-
9
2
7.3
14.8
12.5
2.3
1.2
1.1
3.5
3.4
726
151
80
13
8
16
5
© NXP B.V. 2011. All rights reserved.
Max
-
-
2.15
-
2.55
1
100
100
100
16.1
19.3
10.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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