PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
PSMN011-30YL
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
GS
= 0 V
(A)
I
S
50
40
30
20
10
0
0
All information provided in this document is subject to legal disclaimers.
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
0.3
Rev. 2 — 17 May 2011
T
j
= 150 °C
0.6
0.9
T
j
V
= 25 °C
003aaf443
SD
(V)
1.2
PSMN011-30YL
© NXP B.V. 2011. All rights reserved.
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