FDS6986S Fairchild Semiconductor, FDS6986S Datasheet
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FDS6986S
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FDS6986S Summary of contents
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... FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency ...
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... mA, Referenced 250 uA, Referenced 7 7 125 125 1.0 MHz V = 15mV 1.0 MHz 10V GEN 500 100 –100 2 1 –6 mV – 1233 pF Q1 695 Q2 344 pF Q1 117 Q2 106 1 1.3 FDS6986S Rev C1 (W) ...
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... Test Conditions 300 A/µs (Note 3.5 A (Note 1.3 A (Note determined by the user's board design 125°C/W when mounted 0.02 in pad copper Type Min Typ Max Units 0.5 0 0.74 1.2 c) 135°C/W when mounted on a minimum pad. FDS6986S Rev C1 (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V 4.5V 5.0V 6.0V 8.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6986S Rev C1 ( 0.8 ...
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... DS 10V 1600 15V 1200 800 400 Figure 8. Capacitance Characteristics. 50 100 100 0.001 0.01 Figure 10. Single Pulse Maximum f = 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. FDS6986S Rev C1 (W) 30 ...
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... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.5V 6.0V 10V DRAIN CURRENT ( 3 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6986S Rev C1 ( 1.2 ...
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... Figure 20. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 FDS6986S Rev C1 (W) 1000 ...
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... Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986S. 10nS/DIV Figure 22. FDS6986S SyncFET body diode reverse recovery characteristic. ...
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