FDS6986S Fairchild Semiconductor, FDS6986S Datasheet

FDS6986S

Manufacturer Part Number

FDS6986S

Description

Manufacturer

Fairchild Semiconductor

Type

Power MOSFETr

Datasheet

1.FDS6986S.pdf (9 pages)

Specifications of FDS6986S

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-volt

30V

Gate-source Voltage (max)

±16V

Power Dissipation

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOIC N

Lead Free Status / Rohs Status

Compliant

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Download datasheet (201Kb)

FDS6986S

Dual Notebook Power Supply N-Channel PowerTrench SyncFET

General Description

The FDS6986S is designed to replace two single SO-8

MOSFETs and Schottky diode in synchronous DC:DC

power supplies that provide various peripheral voltages

for notebook computers and other battery powered

electronic devices. FDS6986S contains two unique

30V, N-channel, logic level, PowerTrench MOSFETs

designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific

emphasis on reducing switching losses while the low-

side switch (Q2) is optimized to reduce conduction

losses. Q2 also includes an integrated Schottky diode

using Fairchild’s monolithic SyncFET technology.

2002 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Thermal Characteristics

Package Marking and Ordering Information

Symbol

DSS

GSS

, T

Device Marking

STG

FDS6986S

SO-8

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Pin 1

SO-8

- Continuous

- Pulsed

FDS6986S

Device

Parameter

= 25°C unless otherwise noted

Reel Size

13”

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

Q2:

7.9A, 30V

Q1:

6.5A, 30V

Optimized to minimize conduction losses

Includes SyncFET Schottky body diode

Optimized for low switching losses

Low gate charge (6.5 nC typical)

7.9

Tape width

12mm

-55 to +150

DS(on)

1.6

0.9

= 20 m

= 28 m

= 29 m

= 38 m

September 2002

6.5

@ V

™

FDS6986S Rev C1(W)

2500 units

= 10V

= 4.5V

= 10V

= 4.5V

Quantity

Units

C/W

Related parts for FDS6986S

FDS6986S Summary of contents

Page 1

... FDS6986S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description The FDS6986S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency ...

Page 2

... mA, Referenced 250 uA, Referenced 7 7 125 125 1.0 MHz V = 15mV 1.0 MHz 10V GEN 500 100 –100 2 1 –6 mV – 1233 pF Q1 695 Q2 344 pF Q1 117 Q2 106 1 1.3 FDS6986S Rev C1 (W) ...

Page 3

... Test Conditions 300 A/µs (Note 3.5 A (Note 1.3 A (Note determined by the user's board design 125°C/W when mounted 0.02 in pad copper Type Min Typ Max Units 0.5 0 0.74 1.2 c) 135°C/W when mounted on a minimum pad. FDS6986S Rev C1 (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V 4.5V 5.0V 6.0V 8.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6986S Rev C1 ( 0.8 ...

Page 5

... DS 10V 1600 15V 1200 800 400 Figure 8. Capacitance Characteristics. 50 100 100 0.001 0.01 Figure 10. Single Pulse Maximum f = 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. FDS6986S Rev C1 (W) 30 ...

Page 6

... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.5V 6.0V 10V DRAIN CURRENT ( 3 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6986S Rev C1 ( 1.2 ...

Page 7

... Figure 20. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 FDS6986S Rev C1 (W) 1000 ...

Page 8

... Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the FDS6986S. 10nS/DIV Figure 22. FDS6986S SyncFET body diode reverse recovery characteristic. ...

Page 9

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