FDS6986S Fairchild Semiconductor, FDS6986S Datasheet - Page 4

• Manufacturer Part Number: FDS6986S
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS6986S

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics: Q2
50
40
30
20
10
50
40
30
20
10
0
0
1.5
Figure 3. On-Resistance Variation with
1.9
1.6
1.3
0.7
0.4
0
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
GS
V
DS
= 10V
V
I
D
GS
= 5V
= 10A
-25
= 10V
V
2.5
GS
6.0V
V
, GATE TO SOURCE VOLTAGE (V)
T
DS
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
5.0V
1
25
4.5V
3.5
50
T
A
= -55
4.0V
75
o
2
C
4.5
100
o
C)
3.5V
125
125
o
C
25
o
C
150
5.5
3
Figure 6. Body Diode Forward Voltage Variation
0.06
0.05
0.04
0.03
0.02
0.01
0.001
0.01
0
0.1
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2.6
2.2
1.8
1.4
0.6
2
1
1
0
0
V
Drain Current and Gate Voltage.
GS
T
A
= 0V
V
= 125
GS
Gate-to-Source Voltage.
= 4.0V
V
o
SD
C
V
10
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
0.2
, GATE TO SOURCE VOLTAGE (V)
T
25
A
= 25
o
C
I
4.5V
D
, DRAIN CURRENT (A)
o
C
20
5.0V
-55
6
0.4
o
C
T
A
6.0V
= 125
30
o
8.0V
C
0.6
8
FDS6986S Rev C1 (W)
10V
40
I
D
= 5A
0.8
10
50