TE28F800C3TA110 Micron Technology Inc, TE28F800C3TA110 Datasheet - Page 10
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TE28F800C3TA110
Manufacturer Part Number
TE28F800C3TA110
Description
Manufacturer
Micron Technology Inc
Datasheet
1.TE28F800C3TA110.pdf
(70 pages)
Specifications of TE28F800C3TA110
Density
8Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
512K
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F800C3TA110
Manufacturer:
TI
Quantity:
201
2.2
Figure 1:
2.3
Datasheet
10
A[MAX:MIN]
C3 Flash Memory Device Block Diagram
Input Buffer
V
CCQ
Address
Address
Counter
Block Diagram
Memory Map
The C3 Discrete device is asymmetrically blocked, which enables system code and data
integration within a single flash device. The bulk of the array is divided into 32 Kword
main blocks that can store code or data, and 4 Kword boot blocks to facilitate storage
of boot code or for frequently changing small parameters. See
Memory Map” on page 11
details.
Latch
Y-Decoder
X-Decoder
Reduction
Control
Power
Output Buffer
and
Table 2, “Bottom Boot Memory Map” on page 12
Y-Gating/Sensing
Comparator
DQ
Identifier
Register
Register
Status
Data
0
-DQ
15
Input Buffer
Command
Write State
Interface
Machine
User
Table 1, “Top Boot
I/O Logic
Program/Erase
Voltage Switch
C3 Discrete
March 2008
290645-24
for
CE#
WE#
OE#
RP#
WP#
GND
V
CC
V
PP