TE28F800C3TA110 Micron Technology Inc, TE28F800C3TA110 Datasheet - Page 40
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TE28F800C3TA110
Manufacturer Part Number
TE28F800C3TA110
Description
Manufacturer
Micron Technology Inc
Datasheet
1.TE28F800C3TA110.pdf
(70 pages)
Specifications of TE28F800C3TA110
Density
8Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
512K
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F800C3TA110
Manufacturer:
TI
Quantity:
201
9.1.5
Datasheet
40
impedance state independent of OE#. If deselected during a Program or Erase
operation, the device continues to consume active power until the Program or Erase
operation is complete.
Reset
From read mode, RP# at V
in a high-impedance state, and turns off all internal circuits. After return from reset, a
time t
t
wake-up interval, normal operation is restored. The CUI resets to read-array mode, the
Status Register is set to 0x80, and all blocks are locked. See
Operations Waveforms” on page
If RP# is taken low for time t
will be aborted; the memory contents at the aborted location (for a program) or block
(for an erase) are no longer valid, since the data may be partially erased or written.
The abort process goes through the following sequence:
In both cases, after returning from an aborted operation, the relevant time t
t
in the previous paragraph. However, in this case, these delays are referenced to the
end of t
As with any automated device, it is important to assert RP# during a system reset.
When the system comes out of reset, the processor reads from the flash memory.
Automated flash memories provide status information when read during Program or
Block-Erase operations. If a CPU reset occurs with no flash memory reset, proper CPU
initialization may not occur because the flash memory may be providing status
information instead of array data. Numonyx™ flash memories allow proper CPU
initialization following a system reset through the use of the RP# input. In this
application, RP# is controlled by the same RESET# signal that resets the system CPU.
PHEL
PHWL
1. When RP# goes low, the device shuts down the operation in progress, a process
2. After time t
which takes time t
during t
“Reset Operations Waveforms” on page
) is required after return from reset before a write cycle can be initiated. After this
/t
PHQV
PHEL
PLRH
is required until the initial read-access outputs are valid. A delay (t
must be observed before a Read or Write operation is initiated, as discussed
PLRH
rather than when RP# goes high.
PLRH
) or enter reset mode (if RP# is deasserted after t
, the part will either reset to read-array mode (if RP# is asserted
PLRH
IL
to complete.
for time t
PLPH
38.
during a Program or Erase operation, the operation
PLPH
deselects the memory, places output drivers
38.
Figure 13, “Reset
PLRH
). See
Figure 13,
PHQV
C3 Discrete
PHWL
March 2008
290645-24
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