CYNSE70128-83BGC Cypress Semiconductor Corp, CYNSE70128-83BGC Datasheet - Page 117

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CYNSE70128-83BGC

Manufacturer Part Number
CYNSE70128-83BGC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CYNSE70128-83BGC

Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Package Type
BGA
Mounting
Surface Mount
Lead Free Status / Rohs Status
Not Compliant

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12.8
The following explains the SRAM Write operation done through a table(s) of up to 31 devices with the following parameters
(TLSZ = 10). The diagram of such table(s) is shown in Figure 12-12. The following assumes that SRAM access is done through
CYNSE70128 device number 0—device 0 is the selected device. Figure 12-13 and Figure 12-14 show the timing diagram for
device number 0 and device number 30, respectively.
At the end of cycle 3, a new command can begin. The Write is a pipelined operation. The Write cycle appears at the SRAM bus,
however, with the same latency as that of a Search instruction, as measured from the second cycle of the Write command.
Document #: 38-02040 Rev. *F
TLSZ = 01, HLAT = XXX, LRAM = 1, LDEV = 1.
• Cycle 1A: The host ASIC applies the Write instruction on CMD[1:0] using CMDV = 1. The DQ bus supplies the address with
• Cycle 1B: The host ASIC continues to apply the Write instruction on CMD[1:0] using CMDV = 1. The DQ bus supplies the
• Cycle 2: The host ASIC continues to drive DQ[71:0]. The data in this cycle is not used by the CYNSE70128 device.
• Cycle 3: The host ASIC continues to drive DQ[71:0]. The data in this cycle is not used by the CYNSE70128 device.
DQ[20:19] set to 10 to select the SRAM address. The host ASIC selects the device for which the ID[4:0] matches the DQ[25:21]
lines. The host ASIC also supplies SADR[23:21] on CMD[8:6] in this cycle.
because burst Writes into the SRAM are not supported.
address with DQ[20:19] set to 10 to select the SRAM address.
Writes into the SRAM are not supported.
SRAM Write with Table(s) of up to 31 Devices
SADR[23:0]
Figure 12-11. SRAM Write Timing for Device Number 7 in a Block of Eight Devices
CMD[10:2]
CMD[1:0]
PHS_L
CMDV
CLK2X
ACK
ALE_L
OE_L
CE_L
SSV
WE_L
SSF
DQ
0
0
0
1
z
1
1
Address
cycle
Write
1
A B
01
cycle
2
x
cycle
3
x
cycle
4
Note
cycle
5
. CMD[2] must be set to 0 for SRAM Write because burst
cycle
6
1
Note
cycle
7
z
z
z
z
. CMD[2] must be set to 0 for SRAM Write
cycle
8
1
0
1
1
cycle
9
cycle
10
CYNSE70128
Page 117 of 137

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