AO4411 Alpha & Omega Semiconductor Inc, AO4411 Datasheet

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AO4411

Manufacturer Part Number
AO4411
Description
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4411

Lead Free Status / Rohs Status
Supplier Unconfirmed

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Rev 10: Jan 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4411 uses advanced trench technology to provide
excellent R
device is suitable for use as a load switch or in PWM
applications.
D
DS(ON)
D
D
Top View
, and ultra-low low gate charge. This
B
Parameter
D
C
C
T
T
T
T
S
A
A
A
A
=25°C
=70°C
=25°C
=70°C
S
SOIC-8
C
S
A
A D
A
G
=25°C unless otherwise noted
Bottom View
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
J
www.aosmd.com
DS
GS
AS
D
, T
, I
R
R
, E
AR
STG
θJA
θJL
AR
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
g
=-10V)
Tested
GS
GS
Maximum
-55 to 150
=-10V)
= -4.5V)
±20
-6.6
-30
-40
3.1
23
26
-8
2
30V P-Channel MOSFET
G
Max
40
75
24
D
S
-30V
-8A
< 32mΩ
< 55mΩ
AO4411
Units
Units
°C/W
°C/W
°C/W
mJ
Page 1 of 6
°C
W
V
V
A
A

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AO4411 Summary of contents

Page 1

... General Description The AO4411 uses advanced trench technology to provide excellent R , and ultra-low low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Drain-Source Voltage ...

Page 2

... Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. θJL =150°C. The SOA curve provides a single pulse rating. J(MAX) www.aosmd.com AO4411 Min Typ Max Units - =55°C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =-8A D 1.0E+01 40 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4411 125°C 25°C 2 2.5 3 3 (Volts =-10V =-4. =- ...

Page 4

... R DS(ON) limited 1.0 T =100°C A 0.1 0.0 0.01 100 1000 (µs) A Figure 10: Maximum Forward Biased Safe 0.1 Pulse Width (s) www.aosmd.com AO4411 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics 10µs 100µs 1ms 10ms T =150°C J(Max) 10s T =25°C ...

Page 5

... Single Pulse 0.001 0.00001 0.0001 0.001 Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 10: Jan 2010 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse P D 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4411 100 1000 Page ...

Page 6

... DUT Resistive Switching Test Circuit & Waveforms Vgs d(on Vdd VDC + Vds 1 Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs -Isd - Vdd VDC - -Vds www.aosmd.com AO4411 Qg Qgd Charge t off t t d(off) f 90% 10% BV DSS dI/ Vdd Page ...

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