BG3123E6327XT Infineon Technologies, BG3123E6327XT Datasheet - Page 7

BG3123E6327XT

Manufacturer Part Number
BG3123E6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG3123E6327XT

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.025A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Gate 1 forward transconductance
g
amp. A
Drain current I
V
amp. A
fs
DS
=
mS
mA
= 5V, V
32
24
20
16
12
28
20
16
12
8
4
0
8
4
0
0
0
(I
D
0.2 0.4 0.6 0.8
), V
G2S
DS
4
D
= 5V, V
= Parameter
=
8
(V
G1S
G2S
1
2V
1.2 1.4 1.6
)
12
= Parameter
2.5V
mA
3V
I
V
D
V
G1S
4V
3V
2V
1.5V
4V
20
2
7
Gate 1 forward transconductance
g
amp. B
Drain current I
V
amp. B
fs
DS
=
mS
mA
= 5V, V
25
15
10
16
12
10
5
0
8
6
4
2
0
0
0
(I
D
0.2 0.4 0.6 0.8
), V
G2S
DS
4
D
= 5V, V
= Parameter
=
(V
G1S
G2S
8
1
2V
1.2 1.4 1.6
)
= Parameter
BG3123...
mA
2007-04-26
2.5V
3V
4V
3V
2V
1.5V
I
V
4V
D
V
G1S
16
2

Related parts for BG3123E6327XT