BG3123E6327XT Infineon Technologies, BG3123E6327XT Datasheet - Page 8

BG3123E6327XT

Manufacturer Part Number
BG3123E6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG3123E6327XT

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.025A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
Drain current I
V
amp. A
DS
G2S
mA
mA
= 5V, V
18
14
12
10
18
14
12
10
= 4V, R
8
6
4
2
0
8
6
4
2
0
0
0
1
1
G2S
G1
D
D
= 4V, R
2
= Parameter in k
2
=
= (V
(V
3
3
GG
GG
G1
)
) amp. A
4
4
= 60k
5
5
50
60
80
100
V
V
V
V
GG
GG
= V
7
7
DS
8
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
Drain current I
V
amp. B
DS
G2S
mA
mA
= 5V, V
18
14
12
10
18
14
12
10
= 4V, R
8
6
4
2
0
8
6
4
2
0
0
0
1
1
G2S
G1
D
D
= 4V, R
2
= Parameter in k
2
=
= (V
(V
3
3
GG
GG
G1
)
) amp. B
4
4
= 50k
5
5
BG3123...
2007-04-26
70
40
50
60
V
V
V
V
GG
GG
= V
7
7
DS

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