SI6933DQ Fairchild Semiconductor, SI6933DQ Datasheet
SI6933DQ
Specifications of SI6933DQ
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SI6933DQ Summary of contents
Page 1
... T =25 C unless otherwise noted A Ratings (Note 1) (Note 1a) (Note 1b) –55 to +150 (Note 1a) (Note 1b) Reel Size Tape width 13’’ 12mm September 2001 = –10 V. DS(ON –4.5V. DS(ON Units – –3.5 A –20 1.0 W 0.6 C 100 C/W 125 Quantity 2500 units Si6933DQ Rev. B (W) ...
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... 1.0 MHz V = – – – GEN V = –15V –3 – –0.83 A (Note determined by the user's board design. CA Min Typ Max Units –30 V –22 mV/ C –1 A –100 nA 100 nA –1 –1.8 –3 V 4.6 mV – 854 pF 215 pF 112 2 –0.83 A –0.7 –1.2 V Si6933DQ Rev. B (W) ...
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... C 0.1 0.01 0.001 0.0001 3 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si6933DQ Rev 1.2 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 Si6933DQ Rev. B (W) 30 1000 2 1000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...