SI6933DQ Fairchild Semiconductor, SI6933DQ Datasheet - Page 3

• Manufacturer Part Number: SI6933DQ
• Description: MOSFET Small Signal 30V/25V PCh MOSFET Dual
• Manufacturer: Fairchild Semiconductor

Specifications of SI6933DQ

• Configuration: Dual Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 28 m Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.5 A
• Power Dissipation: 1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
30
25
20
15
10
16
12
5
0
1
Figure 3. On-Resistance Variation with
8
4
0
-50
Figure 1. On-Region Characteristics.
1.5
0
Figure 5. Transfer Characteristics.
V
GS
V
V
I
DS
D
GS
= -10V
= - 5V
= -4.1A
-25
= -10V
1
2
-V
-V
T
DS
GS
0
J
-6.0V
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
Temperature.
25
2.5
2
-4.5V
50
3
3
75
-4.0V
T
A
= -55
100
o
C)
-3.5V
3.5
o
4
C
125
125
-3.0V
o
C
25
o
C
150
4
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.1
0.12
0.08
0.06
0.04
0.02
10
2.2
1.8
1.6
1.4
1.2
0.8
0.1
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
2
1
0
2
V
0
GS
Drain Current and Gate Voltage.
V
T
= 0V
A
GS
= 25
= -4.0V
0.2
Gate-to-Source Voltage.
-V
o
C
5
SD
, BODY DIODE FORWARD VOLTAGE (V)
-V
T
-4.5V
A
4
GS
= 125
, GATE TO SOURCE VOLTAGE (V)
T
0.4
A
-I
10
= 125
D
o
, DRAIN CURRENT (A)
C
-5.0V
o
C
-6.0V
0.6
15
25
6
o
C
-7.0V
0.8
20
-55
o
C
8
-8.0V
Si6933DQ Rev. B (W)
25
1
I
D
= -2A
-10V
1.2
30
10