AON7900 Alpha & Omega Semiconductor Inc, AON7900 Datasheet - Page 3

• Manufacturer Part Number: AON7900
• Description: MOSFET 2N-CH 30V 24A/40A DFN
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: -r

Specifications of AON7900

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A, 40A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 15V
• Power - Max: 17W, 50W
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 785-1249-2

Rev 0: Sep 2010
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
40
35
30
25
20
15
10
0
30
25
20
15
10
0
2
Figure 3: On-Resistance vs. Drain Current and Gate
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Fig 1: On-Region Characteristics (Note E)
1
10V
3
4
V
Voltage (Note E)
2
DS
6
V
V
V
(Volts)
(Note E)
GS
GS
GS
25°C
I
6
D
=10V
=4.5V
(Volts)
(A)
7V
125°C
3
9
V
I
D
GS
8
=8A
=2.5V
4
12
3.5V
4.5V
www.aosmd.com
10
15
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.8
1.6
1.4
1.2
0.8
30
25
20
15
10
1
5
0
Figure 4: On-Resistance vs. Junction Temperature
0
0
40
0.0
Figure 2: Transfer Characteristics (Note E)
V
Figure 6: Body-Diode Characteristics (Note E)
DS
0.5
25
=5V
125°C
0.2
50
1
0.4
Temperature (°C)
125°C
1.5
75
V
GS
(Note E)
V
V
I
D
0.6
(Volts)
SD
GS
=8A
100
2
=10V
(Volts)
0.8
125
2.5
25°C
1.0
150
V
I
3
D
25°C
GS
=4A
=4.5V
17
10
18
1.2
Page 3 of 10
5
2
175
0
3.5
AON7900
200
1.4
4