ATtiny26 Atmel Corporation, ATtiny26 Datasheet - Page 113

• Manufacturer Part Number: ATtiny26
• Manufacturer: Atmel Corporation

Specifications of ATtiny26

• Flash (kbytes): 2 Kbytes
• Pin Count: 20
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 16
• Ext Interrupts: 11
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 11
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 0.12
• Eeprom (bytes): 128
• Self Program Memory: NO
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 3
• Pwm Channels: 4
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

Chip Erase
Programming the
Flash
1477K–AVR–08/10
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see Table 52 on page 109. When programming the Flash, the
program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command "Write Flash"
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the address low byte.
C. Load Data Low Byte
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data low byte ($00 - $FF).
3. Give XTAL1 a positive pulse. This loads the data byte.
D. Load Data High Byte
1. Set BS1 to “1”. This selects high data byte.
2. Set XA1, XA0 to “01”. This enables data loading.
3. Set DATA = Data high byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the data byte.
E. Repeat B through D until the entire buffer is filled or until all data within the page is loaded.
While the lower bits in the address are mapped to words within the page, the higher bits address
the pages within the FLASH. This is illustrated in Figure 59 on page 114. Note that if less than 8
bits are required to address words in the page (pagesize < 256), the most significant bit(s) in the
address low byte are used to address the page when performing a page write.
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
(1)
memories plus Lock bits. The Lock bits are
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