AD8067 Analog Devices, AD8067 Datasheet - Page 6

• Manufacturer Part Number: AD8067
• Manufacturer: Analog Devices

Specifications of AD8067

• Vcc-vee: 5V to 24V
• Isy Per Amplifier: 7mA
• Packages: SOT
• -3db Bandwidth: 54MHz
• Slew Rate: 640V/µs
• Vos: 200µV
• Ib: 0.6pA
• # Opamps Per Pkg: 1
• Input Noise (nv/rthz): 6.6nV/rtHz

AD8067
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Power Dissipation
Common-Mode Input Voltage
Differential Input Voltage
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering 10 sec)
Junction Temperature
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The associated raise in junction temperature (T
limits the maximum safe power dissipation in the AD8067
package. At approximately 150°C, which is the glass transition
temperature, the plastic changes its properties. Even temporarily
exceeding this temperature limit can change the stresses that the
package exerts on the die, permanently shifting the parametric
performance of the AD8067. Exceeding a junction temperature
of 175°C for an extended period can result in changes in the
silicon devices, potentially causing failure.
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive. The quiescent power is the
voltage between the supply pins (V
current (I
the total drive power is V
in the package and some in the load (V
difference between the total drive power and the load power is
the drive power dissipated in the package. RMS output voltages
should be considered.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
S
). Assuming the load (R
S
/2 × I
OUT
L
, some of which is dissipated
S
) is referenced to midsupply,
) times the quiescent
D
OUT
) is the sum of the
Rating
26.4 V
See Figure 3
V
1.8 V
–65°C to +125°C
–40°C to +85°C
300°C
150°C
EE
× I
– 0.5 V to V
OUT
J
) on the die
). The
CC
+ 0.5 V
Rev. A | Page 6 of 24
If R
total drive power is V
If the rms signal levels are indeterminate, then consider the
worst case, when V
In single-supply operation with R
is V
Airflow increases heat dissipation effectively, reducing θ
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θ
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the SOT-23-5
(180°C/W) package on a JEDEC standard 4-layer board. θ
values are approximations.
It should be noted that for every 10°C rise in temperature, I
approximately doubles (see
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
L
OUT
P
is referenced to V
P
P
D
D
D
= V
= Quiescent Power + (Total Drive Power − Load Power)
2.0
1.5
1.0
0.5
=
=
0
–40
(
(
V
V
S
/2.
S
S
JA
–30 –20 –10
×
×
.
I
I
S
S
)
) (
+
OUT
+
⎛
⎜
⎜
⎝
SOT-23-5
V
S
V
2
S−
× I
= V
S
AMBIENT TEMPERATURE – °C
S
R
4 /
×
as in single-supply operation, then the
L
OUT
0
S
V
)
/4 for R
2
Figure 22
R
OUT
.
10
L
⎞
⎟
⎟
⎠
20
–
L
L
referenced to V
V
to midsupply:
OUT
R
30
).
L
2
40
50
60
S−
, worst case
70
JA
80
. In
JA
B
B