BUK7109-75ATE NXP Semiconductors, BUK7109-75ATE Datasheet - Page 10

• Manufacturer Part Number: BUK7109-75ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7109-75ATE_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Forward transconductance as a function of
(mV)
V
100
700
600
500
400
F
(A)
I D
75
50
25
0
function of gate-source voltage; typical values
drain current; typical values
0
0
50
2
175 °C
100
4
T j = 25 °C
6
150
V GS (V)
T
03ni84
j
(°C)
03ne84
Rev. 02 — 10 February 2009
8
200
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Temperature coefficient of temperature sense
(mV/K)
−1.70
−1.60
−1.50
−1.40
S
V GS
F
(V)
10
8
6
4
2
0
645
gate charge; typical values
diode as a function of forward voltage; typical
values
0
N-channel TrenchPLUS standard level FET
655
BUK7109-75ATE
14 V
50
max
min
typ
V DS = 60 V
100
665
Q G (nC)
V
© NXP B.V. 2009. All rights reserved.
F
(mV)
03ni92
03ne85
150
675
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