BUK7109-75ATE NXP Semiconductors, BUK7109-75ATE Datasheet - Page 8

• Manufacturer Part Number: BUK7109-75ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7109-75ATE_2
Product data sheet
Fig 5.
Fig 7.
R DSon
(mΩ)
350
280
210
140
(A)
I D
20
15
10
70
0
5
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
V GS = 5.5V
20
10
2
100
9
4
6 V
8.5
200
8
6.5V
6
label is V GS (V)
7 V
300
8 V
8
10 V
20 V
I D (A)
V DS (V)
03ni80
03ni81
7.5
6.5
5.5
4.5
7
5
6
400
10
Rev. 02 — 10 February 2009
Fig 6.
Fig 8.
R DSon
(mΩ)
a
2.4
1.6
0.8
16
14
12
10
8
6
0
−60
of gate-source voltage; typical values
factor as a function of junction temperature
Drain-source on-state resistance as a function
Normalized drain-source on-state resistance
5
N-channel TrenchPLUS standard level FET
0
BUK7109-75ATE
10
60
15
120
V GS (V)
© NXP B.V. 2009. All rights reserved.
T
03ni82
j
(°C)
03nb25
20
180
8 of 15