BUK7109-75ATE NXP Semiconductors, BUK7109-75ATE Datasheet - Page 4

• Manufacturer Part Number: BUK7109-75ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7109-75ATE_2
Product data sheet
Fig 1.
Fig 3.
P
(%)
(A)
der
I D
120
10 3
10 2
80
40
10
1
0
function of mounting base temperature
Normalized total power dissipation as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Capped at 75 A due to package
Limit R DSon = V DS /I D
50
100
150
T
mb
10
03na19
(°C)
DC
Rev. 02 — 10 February 2009
200
Fig 2.
120
I D
(A)
80
40
0
mounting base temperature
Continuous drain current as a function of
0
N-channel TrenchPLUS standard level FET
Capped at 75 A due to package
100 μs
1 ms
10 ms
100 ms
t p = 10 μs
10 2
50
BUK7109-75ATE
V DS (V)
100
150
© NXP B.V. 2009. All rights reserved.
T mb (°C)
03ni96
03ni95
10 3
200
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