BUK7109-75ATE NXP Semiconductors, BUK7109-75ATE Datasheet - Page 5

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7109-75ATE

Manufacturer Part Number
BUK7109-75ATE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
BUK7109-75ATE_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Z th(j-mb)
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
(K/W)
10 -1
10 -2
10 -3
1
10 -6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10 -5
Conditions
minimum footprint; mounted on a
printed-circuit board
see
Figure 4
10 -4
Rev. 02 — 10 February 2009
10 -3
10 -2
N-channel TrenchPLUS standard level FET
10 -1
BUK7109-75ATE
Min
-
-
P
Typ
50
-
1
t p
T
© NXP B.V. 2009. All rights reserved.
t p (s)
δ
=
03ni64
Max
-
0.55
t p
T
t
10
Unit
K/W
K/W
5 of 15

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