BUK7109-75ATE NXP Semiconductors, BUK7109-75ATE Datasheet - Page 9

• Manufacturer Part Number: BUK7109-75ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7109-75ATE_2
Product data sheet
Fig 9.
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
g fs
(S)
80
60
40
20
0
5
4
3
2
1
0
−60
junction temperature
drain current; typical values
Gate-source threshold voltage as a function of
0
25
0
50
60
max
min
typ
75
120
I D (A)
T
j
03ni83
(°C)
03aa32
100
Rev. 02 — 10 February 2009
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
8000
6000
4000
2000
(pF)
I
10
10
10
10
10
10
D
C
−1
−2
−3
−4
−5
−6
0
10 -2
gate-source voltage
as a function of drain-source voltage; typical
values
0
N-channel TrenchPLUS standard level FET
10 -1
C rss
BUK7109-75ATE
2
min
1
typ
C iss
C oss
4
10
max
V
© NXP B.V. 2009. All rights reserved.
GS
V DS (V)
03ni97
(V)
03aa35
10 2
6
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